Semikron SEMIX603GB12E4P IGBT Module

Semikron SEMIX603GB12E4P is a power semiconductor module designed for use in high power applications such as motor drives, inverters, and power supplies. The module(SEMIX603GB12E4P) features six IGBTs (Insulated Gate Bipolar Transistors) & six diodes arranged in a three-phase bridge configuration, providing a rated current 600A & maximum voltage 1200V.

SEMIX603GB12E4P module has built-in thermal sensors and highly efficient heat sink.

SEMIX603GB12E4P Features:

. Honogengous SI

. Trench= Trenchgate technology

. Vce(sat) with positive temperature coefficient

. High short circuit capability

Typical Applications*

. AC inverter dirves

. UPS

. Electronic Welding

Remarks

. Case temperature limited Tc=125°C max.

. Product reliability results are valid for Tj+150°C

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current IC:600A

Collector current Icp:1200A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:-40 to +175°C

Storage temperature Tstg :-40 to +125°C

Weight 300g