Nexperia invests $200m in Hamburg fab

All three technologies (SiC, GaN, and Si) will be developed and produced in Germany starting in June 2024. .

“Our Hamburg fab will cover the complete range of WBG semiconductors while still being the largest factory for small signal diodes and transistors,” says Nexperia COO Achim Kempe.

First production lines for high-voltage GaN D-Mode transistors and SiC diodes started in June 2024.

200mm production lines for SiC MOSFETs and GaN HEMTs will be established at the Hamburg factory over the next two years.

At the same time, the investment will help to further automate the existing infrastructure at the Hamburg site and expand silicon production capacity by systematically converting to 200mm wafers.

Following the expansion of the clean room areas, new R&D laboratories are being built,

The Hamburg site is now 100 years-old having been founded by Philips as Valvo Radioröhrenfabrik in 1924. It supplies around a quarter of the global demand for small signal diodes and transistors.