650V SiC Schottky diode drops 1.2V

In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage.

Versions with nominal maximum continuous currents between 2A and 12A are available, with seven of them in TO-220-2L packages and five in surface-mount DFN8×8.

At the nominal maximum current for each device, typical forward voltage is 1.2V (1.35Vmax), typically rising to 1.36 at 150°C.

“Third-generation products have improved the trade-offs between Vf and total capacitive charge, which is typically 17nC for the TRS6E65H,” said Toshiba, describing the 6A TO-220 version. 17nC is measured at 400V 25°C 1MHz, where capacitance is 22pF.

The same TRS6E65H typically leaks 1.1μA at 25°C 650V (70μAmax), which typically rises to 10μA at 150°C. Non-repetitive forward surges up to 310A can be handled (10μs 25°C – 640A for 12A types), or a 36A 50Hz half-sine at 150°C.

“The new devices are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle charging stations and photovoltaic inverters.

The whole TRSxxx65H series is linked from this page, and the data sheet for the 6A 650V TRS6E65H can be found here

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